PECVD Plasma Enhanced CVD Systemhas a solid-state plasma sources, the divided reaction gas intake system, dynamic substrate temperature control, full control of the vacuum system, with centralized control technology nobody control software, and user-friendly interface to operate. Applicable for SiO2, SiNx ,, SiONx a-Si thin film deposition at room temperature to 1200 ℃ condition , at the same time the products can achieve TEOS source deposition, SiC film deposition, and other deposition liquid or gaseous source materials, especially for high efficiency protective layer film deposition of organic materials and no damage passivation film deposition under a specific temperature.

• Plasma induced surface modification
• Plasma cleaning
• Plasma polymerization
• A variety of films deposited on the surface of SiOx, SiNx, amorphous silicon, microcrystalline silicon, nano-silicon, SiC, DLC, etc.
• selective growth of the carbon nanotubes (CNT)

Model: NBD-PECVD1200-80ITD2Z
Special screw dual reaction chamber system
Mechanical pumpwith control power
RF generator
Fully digital touch screen temperature control system
2 channel mass flow meter (three channel mass flow meter available)
PECVDdepostion: SiO2, SiNx ,, SiONx a-Si thin film deposition and diamond like carbon thin film depostion
uniformty deviation:≤ ± 4％ ( within 3inch)
working space: 3inch, 10pS
Sample size:2-3″
working temp: 100～1200℃
temperature control accuracy: ≤ ±1℃
Model: NBD-PECVD1200-80ITD2Z
Cleaning and coating RFpower: 20~200Wadjustable
Tube diameter: Φ80mm
Length of Heating zone: 200mm
Max temperature: 1200℃
Size: L1300xH1260xW820
Power:AC220V,4KW
Weight: 360kg

PECVD

The gas is ionized and its activity is enhanced when gas goes through RF generator. After that gas moves to the heating temperature zone and deposit on the surface of the substrates.