Product Description:

This product consists of a solid-state plasma source, gas proton flow control system, substrate temperature control system, and vacuum system. It uses Nobady operation software with centralized bus control technology. Suitable for the deposition of SiO2, SiNx films under conditions ranging from room temperature to 1200°C. It can also achieve TEOS source deposition, SiC film deposition, and deposition of other materials from liquid or gaseous sources. It is particularly suitable for the deposition of efficient protective layers on organic materials and non-damaging passivation films at specific temperatures.